Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

@article{Bouya2007StudyOP,
  title={Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC},
  author={M. Bouya and D. Carisetti and Nathalie Malbert and Nathalie Labat and Philippe Perdu and J. C. Clement and M. Bonnet and G. Pataut},
  journal={Microelectron. Reliab.},
  year={2007},
  volume={47},
  pages={1630-1633}
}
  • M. Bouya, D. Carisetti, +5 authors G. Pataut
  • Published in Microelectron. Reliab. 2007
  • Computer Science, Engineering
  • This paper presents a new method of passivation control by electroluminescence (EL) in 0.15 μm AlGaN/GaN HEMT. The electroluminescence signature in one finger HEMTs (W = 1 x 100 μm), and eight fingers ones (W = 8 x 125 μm), is modified by defects located at the passivation/semiconductor interface and is characterized by a light emission along the drain contact. This abnormal emission reveals some modification of the electric field distribution in the gate-drain space probably induced by traps… CONTINUE READING

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    Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

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