Study of gaseous interactions in carbon nanotube field-effect transistors through selective Si(3)N(4) passivation.

Abstract

Carbon nanotube field-effect transistors with Si(3)N(4) passivated source and drain contacts and exposed carbon nanotube channel show n-type characteristics in air. In contrast, by passivating only the source contact, a diode-like behavior with a maximum current rectification ratio of 4.6 × 10(3) is observed. The rectifying characteristic vanishes in a… (More)
DOI: 10.1088/0957-4484/19/46/465201

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@article{Peng2008StudyOG, title={Study of gaseous interactions in carbon nanotube field-effect transistors through selective Si(3)N(4) passivation.}, author={Ning Peng and Qinghe Zhang and Ooi Kiang Tan and Nicola Marzari}, journal={Nanotechnology}, year={2008}, volume={19 46}, pages={465201} }