Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle

@article{Croes2008StudyOC,
  title={Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle},
  author={Kris Croes and G. Cannat{\'a} and Lian Zhao and Zsolt Tokei},
  journal={Microelectronics Reliability},
  year={2008},
  volume={48},
  pages={1384-1387}
}
A fully passivated Metal-Oxide-Semiconductor (MOS) capacitor [T} okei Zs. Barrier integrity and reliability in copper low-k interconnects. ISTC 2005; 386–95] is used to study the intrinsic properties of a barrier between copper and dielectric in Back-End-Of-Line interconnects. Several barriers are studied and compared to each other. The test vehicle is also used to thoroughly investigate the role of thermal diffusion or field assisted ionic copper drift during Time-Dependent-Dielectric… CONTINUE READING
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