Study of a New Field-Effect Resistive Hydrogen Sensor Based on a Pd/Oxide/AlGaAs Transistor

Abstract

A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium (Pd) metal, is studied and demonstrated. An oxide layer between Pd and AlGaAs is used to increase the number… (More)

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