Study of Si-wafer directly bonded interface effect on power device characteristics

Abstract

A high voltage transistor and an Insulated Gate Bipolar Transistor (IGBT) were fabricated by using Silicon-wafer Direct Bonding (SDB) technique to study the effect of direct bonded interface on power device characteristics. Prior to the device fabrication, heat treatment condition of SDB was investigated, and it was confirmed that electrically and… (More)

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