Study of Si-based Ge heteroepitaxy using RPCVD

Abstract

It is demonstrated that Ge epilayers with high quantity, low defect density and smooth surface were achieved using cycle method. In addition, the epitaxy of GaAs on the Ge epilayer/Si substrate is also prepared. 

Cite this paper

@article{Yao2014StudyOS, title={Study of Si-based Ge heteroepitaxy using RPCVD}, author={Lei Yao and Renrong Liang and Chunsheng Jiang and Jing Wang and Jun Xu}, journal={2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)}, year={2014}, pages={93-94} }