Study of InGaAs-Based Modulation Doped Field Effect Transistor Structures Using Variable-Angle Spectroscopic Ellipsometry

Abstract

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InCaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs… (More)

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