Study of GaN epilayers growth on freestanding Si cantilevers

@inproceedings{Chen2010StudyOG,
  title={Study of GaN epilayers growth on freestanding Si cantilevers},
  author={Jing Chen and Xi Wang and Aimin Wu and Bo Zhang and Yuxin Wu and Jianjun Zhu and Hui Yang},
  year={2010}
}
Abstract Five-micron thick freestanding Si cantilevers were fabricated on bulk Si (1 1 1) substrates with surface/bulk micromachining (SBM) process. Then 1-μm thick GaN layers were deposited on the Si cantilevers by metal-organic chemical vapor deposition (MOCVD). Epilayers on cantilever areas were obtained crack-free, and the photoluminescence (PL) spectra verified the stress reduction and better material quality in these suspended parts of GaN. Back sides of the cantilevers were also covered… CONTINUE READING

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  • The 2nd International Conference on Information Science and Engineering
  • 2010
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