Study of Electrical Stress Effect on SiGe HBT Low-Noise Amplifier Performance by Simulation

@article{Yu2006StudyOE,
  title={Study of Electrical Stress Effect on SiGe HBT Low-Noise Amplifier Performance by Simulation},
  author={Chuanzhao Yu and J. S. Yuan and John Shen and Enjun Xiao},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2006},
  volume={6},
  pages={550-555}
}
This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise amplifier using SiGe heterojunction bipolar transistors. Changes in device characteristics due to accelerated hot-carrier stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured device data before and after stress are used in Cadence SpectreRF simulation to evaluate the circuit performance degradation