Structure and thermoelectric properties of PbTe films deposited by thermal evaporation method

Abstract

Lead telluride (PbTe) thin films have been deposited on SiO<sub>2</sub> substrate using thermal evaporation method. The structure of the films was found to have a face-centered cubic (fcc) with predominant grain growth in the (200) direction for both as-deposited and annealed samples up to 350 &#x00B0;C in vacuum for 1 h. The in-plain electrical resistivity… (More)

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2 Figures and Tables