Structure and surface morphology of thermal SiO<inf>2</inf> grown on 4H-SiC by metal-enhanced oxidation using barium

Abstract

Surface morphology and electrical properties of silicon dioxide (SiO<inf>2</inf>) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-MEO can be suppressed by using SiO<inf>2</inf> capping prior to MEO. The Ba atoms at the SiO<inf>2… (More)

Cite this paper

@article{Chanthaphan2016StructureAS, title={Structure and surface morphology of thermal SiO2 grown on 4H-SiC by metal-enhanced oxidation using barium}, author={Atthawut Chanthaphan and Yoshihito Katsu and Takuji Hosoi and Takayoshi Shimura and Heiji Watanabe}, journal={2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)}, year={2016}, pages={1-1} }