Structure and electrical resistivity of CeNiSb3

@article{Macaluso2004StructureAE,
  title={Structure and electrical resistivity of CeNiSb3},
  author={R. Macaluso and Daniel M. Wells and R. Sykora and T. Albrecht-Schmitt and A. Mar and S. Nakatsuji and H. Lee and Z. Fisk and J. Chan},
  journal={Journal of Solid State Chemistry},
  year={2004},
  volume={177},
  pages={293-298}
}
Abstract The ternary antimonide CeNiSb 3 has been prepared from an Sb flux or from reaction of Ce, NiSb, and Sb above 1123 K. It crystallizes in the orthorhombic space group Pbcm with Z =12 and lattice parameters a =12.6340(7) A, b =6.2037(3) A, and c =18.3698(9) A at 193 K. Its structure consists of buckled square nets of Sb atoms and layers of highly distorted edge- and face-sharing NiSb 6 octahedra. Located between the ∞ 2 [Sb] and ∞ 2 [NiSb 2 ] layers are the Ce atoms, in monocapped square… Expand
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