Corpus ID: 91463365

Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition

@inproceedings{Muhammad2011StructureAE,
  title={Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition},
  author={Rosnita Muhammad},
  year={2011}
}
  • Rosnita Muhammad
  • Published 2011
  • Materials Science
  • Gallium Arsenide nanowires (GaAs NWs) have been grown on GaAs and Silicon (Si) substrates by gold-assisted and using metal-organic chemical vapor deposition (MOCVD) method. The structural properties and electrical conductivity were studied and was found to be strongly dependent on the pre-annealing temperature, growth temperature, growth period and V/III ratio. Pre-annealing process at 600 oC has produced an eutectic point of Au and GaAs substrate and initiated the growth of the NWs. The NWs… CONTINUE READING

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    References

    Publications referenced by this paper.
    SHOWING 1-10 OF 118 REFERENCES

    Defect-free InP NWs grown in [001] direction on InP (001)

    • U. Krishnamachari, M. Borgstrom, +5 authors L. R.Wallenberg
    • Applied Physics Letters. Vol 85 (11). p 2077-2079.
    • 2004
    VIEW 4 EXCERPTS
    HIGHLY INFLUENTIAL

    Growth of NWs

    • N Wang, Y. Cai, R. Q.Zhang.
    • Materials Science Engineering : Review Reports. Vol 60 (1-6). p 1-51
    • 2008
    VIEW 6 EXCERPTS
    HIGHLY INFLUENTIAL

    Semiconductor NWs for Electronic and Optoelectronic device applications

    • Y. Shu, M. L.Hwee, G. Ma.Si
    • Handbook of Semiconductor Nanostructure and nanodevices.Vol 4. p 279 – 310.
    • 2006
    VIEW 1 EXCERPT
    HIGHLY INFLUENTIAL

    Properties of group-IV, III-V and II-VI semiconductors

    VIEW 2 EXCERPTS
    HIGHLY INFLUENTIAL

    GaAs MMIC Reliability Assurance Guideline for Space Applications

    • S. Kayali, G. Ponchak, R. Shaw
    • Pasadena, California: Jet Propulsion Laboratory California Institute of Technology. p 1-10
    • 1996
    VIEW 2 EXCERPTS
    HIGHLY INFLUENTIAL