Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions

@inproceedings{Wang2011StructuralEO,
  title={Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions},
  author={Ya Xian Wang and Zhi-ming Liao and Hong-yi Xu and Faxian Xiu and Xufeng Kou and Yong Wang and Kang L. Wang and John Drennan and Jin Zou},
  booktitle={Nanoscale research letters},
  year={2011}
}
GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å) and GaAs (5.653 Å), while a periodic Ge/GeMn superlattice grown on Si showed disordered GeMn nanodots with a large amount of stacking… CONTINUE READING