Structural coupling across the direct EuO/Si interface.

Abstract

The ferromagnetic semiconductor EuO is believed to be an effective spin injector when directly integrated with silicon (Si). Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. A recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface… (More)
DOI: 10.1088/0957-4484/27/4/045703

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Cite this paper

@article{Averyanov2016StructuralCA, title={Structural coupling across the direct EuO/Si interface.}, author={Dmitry V. Averyanov and Andrey M. Tokmachev and Igor A. Likhachev and Eduard F. Lobanovich and Oleg E. Parfenov and Elkhan M. Pashaev and Yuri G. Sadofyev and Ilia A. Subbotin and Sergey N. Yakunin and Vyacheslav G. Storchak}, journal={Nanotechnology}, year={2016}, volume={27 4}, pages={045703} }