Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

@inproceedings{Mehonic2015StructuralCA,
  title={Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory},
  author={Adnan Mehonic and Mark Buckwell and Luca Montesi and Leon Garnett and Stephen Hudziak and Sarah Fearn and Richard J. Chater and David S. McPhail and Anthony J. Kenyon},
  year={2015}
}
We present an investigation of structural changes in silicon-rich silicon oxide metal-insulator-metal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy to examine the structural changes occurring as a result… CONTINUE READING

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