Structural and strain relaxation study of epitaxially grown nano-thick Nd<inf>2</inf>O<inf>3</inf>/Si(111) heterostructure

Abstract

This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd<inf>2</inf>O<inf>3</inf> films epitaxially grown on Si(111) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd<inf>2</inf>O<inf>3</inf> layers exhibit a well-ordered cubic… (More)

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