Structural, thermodynamical and optical properties of Cu2-II-IV-VI4 quaternary compounds

@article{Matsushita2005StructuralTA,
  title={Structural, thermodynamical and optical properties of Cu2-II-IV-VI4 quaternary compounds},
  author={Hiroaki Matsushita and Tomohiko Ichikawa and Akinori Katsui},
  journal={Journal of Materials Science},
  year={2005},
  volume={40},
  pages={2003-2005}
}
The Cu2-II-IV-VI4 compounds (II = Zn, Cd; IV = Si, Ge, Sn; VI = S, Se, Te) with a tetrahedral coordinated structure have been investigated, as compared with the results of the products synthesized from respective elemental mixtures. These crystal structures and melting points are determined, using differential thermal analysis and powder X-ray diffraction, respectively. The optical band gaps of these balk crystals grown by the horizontal gradient freezing or Iodine transport method are also… 
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References

SHOWING 1-6 OF 6 REFERENCES
Thermodynamical Properties of I-III-VI2-Group Chalcopyrite Semiconductors
Melting points and transition points of I-III-VI2-group compounds and their solid solutions were determined exactly. The heats of fusion and transition were also estimated. The melting points of
Method of materials design for I‐III‐VI2 chalcopyrite‐type mixed crystal semiconductors
Binary compound semiconductors have become extremely, important in the study of semiconductor devices. On the other hand, it is difficult to obtain a large size, highquality single crystal for a