Strongly Nonlinear Superconducting Silicon Resonators

@article{Bonnet2022StronglyNS,
  title={Strongly Nonlinear Superconducting Silicon Resonators},
  author={Patrick Bonnet and Francesca Chiodi and Daniel Flanigan and Rapha{\"e}lle Delagrange and Nataniel Brochu and D. D'ebarre and H. le Sueur},
  journal={Physical Review Applied},
  year={2022}
}
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with low losses at microwave frequencies. Here, we study experimentally the electrodynamics of superconducting silicon thin layers patterned in coplanar waveguide resonators, targeting three key properties: kinetic inductance, internal losses, and the variation of… 

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References

SHOWING 1-10 OF 65 REFERENCES

IEICE Transactions on Electronics E85-C

  • 1098
  • 2002

The physics of superconducting microwave resonators

Over the past decade, low temperature detectors have brought astronomers revolutionary new observational capabilities and led to many great discoveries. Although a single low temperature detector has

Physical Review Letters 63

  • 1989

Mesures résonantes des propriétés hautes fréquences du silicium supraconducteur ultra-dopé au bore par laser

Bien que ce soit l'un des elements les plus etudies, le caractere supraconducteur du silicium n'a ete revele qu'en 2006, a cause du fort dopage en bore necessaire a son apparition. Seul un dopage

Superconducting properties of laser annealed implanted Si:B epilayers

We report on the superconducting properties of heavily doped silicon epilayers obtained by the implantation of B atoms in silicon wafers and subsequent laser annealing (pulsed laser induced epitaxy).

Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate

The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800?°C. High-resolution transmission electron microscopy (HRTEM) is used to

The Pinning Potential and High‐Frequency Studies of Type‐II Superconductors

The electrical impedance of type‐II superconductors as a function of frequency is discussed in terms of a ``pinning potential.'' Many flux‐pinning properties of the mixed state at any frequency can
...