• Corpus ID: 234487045

Strong bulk-surface interaction controlled in-plane anisotropy of electronic structure in GaTe

  title={Strong bulk-surface interaction controlled in-plane anisotropy of electronic structure in GaTe},
  author={Kang Lai and Sailong Ju and Hongen Zhu and Bingjie Yang and Enrui Zhang and Ming Yang and Fangsen Li and Shengtao Cui and Xiaohui Deng and Zheng Vitto Han and Mengjian Zhu and Jiayu Dai},
anisotropy of electronic structure in GaTe Kang Lai1, Sailong Ju1, Hongen Zhu2, Bingjie Yang3, Enrui Zhang1, Ming Yang1, Fangsen Li3, Shengtao Cui2, Xiaohui Deng4, Zheng Han5,6*, Mengjian Zhu7*, Jiayu Dai1* 1Department of Physics, National University of Defense Technology, Changsha 410073, China 2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China 3School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei… 

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