Strong Superconducting Proximity Effect in Pb-Bi2Te3 Hybrid Structures

  title={Strong Superconducting Proximity Effect in Pb-Bi2Te3 Hybrid Structures},
  author={Fanming Qu and Fan Yang and Jie Shen and Yue-He Ding and Jun Chen and Zhongqing Ji and Guangtong Liu and Jie Fan and Xiunian Jing and Changli Yang and Li Lu},
  journal={Scientific Reports},
To study the interface between a conventional superconductor and a topological insulator, we fabricated Pb-Bi2Te3-Pb lateral and sandwiched junctions, and performed electron transport measurements down to low temperatures. The results show that there is a strong superconducting proximity effect between Bi2Te3 and Pb, as that a supercurrent can be established along the thickness direction of the Bi2Te3 flakes (100~300 nm thick) at a temperature very close to the superconducting Tc of Pb… 
Superconducting Long-Range Proximity Effect through the Atomically Flat Interface of a Bi2Te3 Topological Insulator.
The data analysis and DFT calculations demonstrate that the Pb-wetting layer leads to significant modifications of both topological and trivial electronic states of Bi2Te3, which are responsible for the observed long-range proximity effect.
Two-dimensional superconductivity at the interface of a Bi2Te3/FeTe heterostructure.
Transport measurements on a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy demonstrate superconductivity at the interface, which is induced by the Bi2 Te3 epilayer with thickness even down to one quintuple layer, though there is no clear-cut evidence that the observedsuperconductivity isinduced by the topological surface states.
Josephson current mediated by ballistic topological states in Bi2Te2.3Se0.7 single nanocrystals
Superconducting proximity devices using low-dimensional semiconducting elements enable a ballistic regime in the proximity transport. The use of topological insulators in such devices is considered
Proximity‐Effect‐Induced Superconductivity in Nb/Sb2Te3‐Nanoribbon/Nb Junctions
Nanohybrid superconducting junctions using antimony telluride (Sb2Te3) topological insulator nanoribbons and Nb superconducting electrodes are fabricated using electron beam lithography and magnetron
Conductance spectroscopy of vertical topological Josephson junction Nb/(Bi0.5Sb0.5)2Te3/Nb
The surface states of a topological insulator (TI) can be induced with superconductivity through proximity with a conventional s-wave superconductor (S). To study the coupling between two
Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films
We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L =
Origin of Suppression of Proximity‐Induced Superconductivity in Bi/Bi2Sr2CaCu2O 8+δ Heterostructures
Mixing of topological states with superconductivity could result in topological superconductivity with the elusive Majorana fermions potentially applicable in fault‐tolerant quantum computing. One
Coulomb blockade effects in a topological insulator grown on a high-Tc cuprate superconductor
The evidence for proximity-induced superconductivity in heterostructures of topological insulators and high- T c cuprates has been intensely debated. We use molecular-beam epitaxy to grow thin films
Josephson supercurrent in a topological insulator without a bulk shunt
A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi Sb Te Se . We show that the transport in Bi Sb Te Se exfoliated flakes is dominated by surface states and


Superconducting proximity effect and possible evidence for Pearl vortices in a candidate topological insulator
We report the observation of the superconducting proximity effect in nanoribbons of a candidate topological insulator (Bi2Se3) which is interfaced with superconducting (tungsten) contacts. We observe
Proximity effect at superconducting Sn-Bi2Se3 interface
We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting
Gate-tuned normal and superconducting transport at the surface of a topological insulator
This work studies transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode, to demonstrate how gated nano-electronic devices give control over normal andsuperconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulators.
Superconducting proximity effect and majorana fermions at the surface of a topological insulator.
It is shown that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.
Bipolar supercurrent in graphene
Light is shed on the special role of time reversal symmetry in graphene, and phase coherent electronic transport at the Dirac point is demonstrated, finding that not only the normal state conductance of graphene is finite, but also a finite supercurrent can flow at zero charge density.
Manipulation of the Majorana fermion, Andreev reflection, and Josephson current on topological insulators.
The chiral Majorana mode generated in N/FI/S and S/ FI/S junctions is very sensitively controlled by the direction of the magnetization m in the FI region, and has a phase shift of neither 0 nor pi that can be tuned continuously by the component of m perpendicular to the interface.
Evidence for helical edge modes in inverted InAs/GaSb quantum wells.
This analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al, which persist in spite of sizable bulk conduction and show only a weak magnetic field dependence.
Andreev reflection of helical edge modes in InAs/GaSb quantum spin Hall insulator.
We present an experimental study of S-N-S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge
Generic new platform for topological quantum computation using semiconductor heterostructures.
The heterostructure proposed is a semiconducting thin film sandwiched between an s-wave superconductor and a magnetic insulator which can be used as the platform for topological quantum computation by virtue of the existence of non-Abelian Majorana fermions.
Colloquium : Topological insulators
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. These states are possible due to