Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

@inproceedings{Jones2008StressedSE,
  title={Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon},
  author={K. S. Jones and R. Gwilliamb},
  year={2008}
}
The kinetics of stressed solid-phase epitaxial growth (SPEG), also referred to as solid-phase epitaxy, solidphase epitaxial regrowth, solid-phase epitaxial recrystallization, and solid-phase epitaxial crystallization, of amorphous (a) silicon (Si) created via ion-implantation are reviewed. The effects of hydrostatic, in-plane uniaxial, and normal uniaxial compressive stress on SPEG kinetics are examined in intrinsic (0 0 1)Si. Particular emphasis is placed on unifying the results of different… CONTINUE READING

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