Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films

@inproceedings{Martyniuk2006StressIL,
  title={Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films},
  author={Mariusz Martyniuk and J. Antoszewski and Charles Musca and John Dell and Lorenzo Faraone},
  year={2006}
}
Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiNx thin films: one that measures the stress-induced substrate curvature, and the other that takes advantage of the stress-induced deformation of freestanding diagnostic microstructures. A general linear dependence of residual stress on SiNx deposition temperature is observed, with the magnitude of stress changing linearly from ~300 MPa tensile… CONTINUE READING

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