Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

@inproceedings{Dai2015StressEI,
  title={Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling},
  author={Yiquan Dai and Shuiming Li and Hongwei Gao and Weihui Wang and Qian Sun and Qing Peng and Chengqun Gui and Zhengfang Qian and Sheng Liu},
  year={2015}
}
We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed… CONTINUE READING