Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET

@article{Treu2007StrategicCF,
  title={Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET},
  author={Martin Treu and Roland Rupp and P. Blaschitz and K. Ruschenschmidt and Thomas Sekinger and Peter Friedrichs and R. Elpelt and Dethard Peters},
  journal={2007 IEEE Industry Applications Annual Meeting},
  year={2007},
  pages={324-330}
}
This paper compares the two most prominent alternatives of an upcoming commercial SiC power switch: JFET vs. MOSFET. Besides the lower specific Ron achievable with a SiC-JFET according to today's technological progress, also reliability and long term stability concerns give advantage to the JFET concept. The major drawback of the JFET, its normally on characteristic, can easily be overcome by a cascade configuration together with a fast low voltage power MOSFET. In some applications the self… CONTINUE READING
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