Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

@article{Hashemi2014StrainedSP,
  title={Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond},
  author={Pouya Hashemi and Karthik Balakrishnan and Amlan Majumdar and Ali Khakifirooz and Wanki Kim and Ashish Baraskar and Li A. Yang and Kevin Ka Ming Chan and Sebastian Engelmann and J. A. Ott and Dimitri A. Antoniadis and E. Leobandung and Dae-gyu Park},
  journal={2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers},
  year={2014},
  pages={1-2}
}
We demonstrate high performance (HP) s-SiGe pMOS finFETs with I<sub>on</sub>/I<sub>eff</sub> of ~1.05/0.52mA/μm and ~1.3/0.71mA/μm at I<sub>off</sub>=100nA/μm at V<sub>DD</sub>=0.8 and 1V, extremely high intrinsic performance and source injection velocity. Compared to earlier work, an optimized process flow and a novel interface passivation scheme, result in ~30% mobility enhancement and dramatic sub-threshold-swing reduction to 65mV/dec. We also demonstrate the most aggressively scaled s-SiGe… CONTINUE READING