Strained-Si Channel Super-Self-Aligned Back-Gate/Double-Gate Planar Transistors

Abstract

We present a reproducible approach to the fabrication of super-self-aligned back-gate/double-gate n-channel and p-channel transistors with thin silicon channels and thick source/drain polysilicon regions. The device structure provides capability for scalable control of channel electrostatics, threshold variability without sacrificing source/drain series… (More)

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