Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In<sub>0.4</sub>Ga<sub>0.6</sub>As S/D on the In<sub>0.53</sub>Ga<sub>0.47</sub>As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH<sub>4</sub>+NH… CONTINUE READING