Strain relief and shape oscillations in site-controlled coherent SiGe islands.

Abstract

Strain engineering and the crystalline quality of semiconductor nanostructures are important issues for electronic and optoelectronic devices. We report on defect-free SiGe island arrays resulting from Ge coverages of up to 38 monolayers grown on prepatterned Si(001) substrates. This represents a significant expansion of the parameter space known for the… (More)
DOI: 10.1088/0957-4484/24/33/335707

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