Strain relaxation induced 1-dimensional and O-dimensional structures: Bi on Ge(O01)

Abstract

The growth of bismuth on Ge(001 ) has been studied using scanning tunneling microscopy. Deposition of one-monolayer (ML) Bi at room temperature and subsequent annealing at 500 K results in the formation of a well-ordered (2 x n) vacancy line network oriented perpendicular to the dimer rows. Deposition of two-monolayer Bi under the same conditions results in… (More)

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