Strain-induced very low noise RF MOSFETs on flexible plastic substrate


Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NF/sub min/) and high 12 dB associate gain are measured at 10 GHz of 0.18/spl mu/m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30/spl mu/m that allows applying uniaxial strain to further lower the 10 GHz NF/sub min… (More)


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