Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure

@article{Figueroa2016StrainIE,
  title={Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure},
  author={A. Figueroa and S. Zhang and A. A. Baker and R. Chalasani and A. Kohn and S. Speller and D. Gianolio and C. Pfleiderer and G. D. Laan and T. Hesjedal},
  journal={Physical Review B},
  year={2016},
  volume={94},
  pages={174107}
}
  • A. Figueroa, S. Zhang, +7 authors T. Hesjedal
  • Published 2016
  • Materials Science, Physics
  • Physical Review B
  • We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100\char21{}500 \AA{}) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature ${T}_{\mathrm{c}}$ assumes a thickness-independent… CONTINUE READING
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