Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

@article{Loong2014StrainenhancedTM,
  title={Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions},
  author={Li Ming Loong and Xuepeng Qiu and Zhi Peng Neo and Praveen Deorani and Yang Wu and Charanjit S. Bhatia and Mark Saeys and Hyunsoo Yang},
  journal={Scientific Reports},
  year={2014},
  volume={4}
}
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical… 
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