Strain Engineering of the Berry Curvature Dipole and Valley Magnetization in Monolayer MoS_{2}.

@article{Son2019StrainEO,
  title={Strain Engineering of the Berry Curvature Dipole and Valley Magnetization in Monolayer MoS\_\{2\}.},
  author={Joolee Son and Kyunghac Kim and Young-Ho Ahn and Hyun-Woo Lee and Jieun Lee},
  journal={Physical review letters},
  year={2019},
  volume={123 3},
  pages={
          036806
        }
}
The Berry curvature dipole is a physical quantity that is expected to allow various quantum geometrical phenomena in a range of solid-state systems. Monolayer transition metal dichalcogenides provide an exceptional platform to modulate and investigate the Berry curvature dipole through strain. Here, we theoretically demonstrate and experimentally verify for monolayer MoS_{2} the generation of valley orbital magnetization as a response to an in-plane electric field due to the Berry curvature… Expand

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