• Published 2017

Strain Effect on InGaN / GaN Quantum Well

@inproceedings{Sen2017StrainEO,
  title={Strain Effect on InGaN / GaN Quantum Well},
  author={Soumen Sen and Aishwerya Anu},
  year={2017}
}
The strains are calculated from the In mole fraction and lattice constants.The parameters implicity involved are elastic stiffness constants(C11 and C22),The hydrostatic deformation potential of the conduction band(a’) and the hydrostatic deformation potential(a) and shear deformation potential(b) for the valence band.The effects of strain become prominent as the mole fraction of In increases, changing the band effect ratio.diffrent level of strain energy were built with different quantum well… CONTINUE READING

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