Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability

@article{Raghavan2013StochasticVO,
  title={Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability},
  author={Nagarajan Raghavan and Robin Degraeve and Andrea Fantini and Ludovic Goux and D. J. Wouters and Guido Groeseneken and Malgorzata Jurczak},
  journal={2013 IEEE International Electron Devices Meeting},
  year={2013},
  pages={21.1.1-21.1.4}
}
Considering SET and RESET to be dynamic stochastic processes involving the generation-recombination and drift-diffusion of multiple oxygen ions / vacancies, we examine the microscopic statistical changes in the shape of the filament during multiple switching cycles in ultra-thin low-power HfOx-based RRAM. The effect of forming compliance, dielectric… CONTINUE READING