Stimulated emission from optically pumped cubic GaN on GaAs (100) substrate

Abstract

Group III-nitrides are attractive for use in light emitting devices. It is well known that zinc-blende type III-nitrides can be grown on substrates that have a cubic lattice. However, it has been difficult to grow high-quality crystals. Recently we reported that the molar ratio of precursors played an important role in determining the quality of cubic GaN… (More)

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