Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides.

@article{Huang2005StepcontrolledSR,
  title={Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides.},
  author={X. R. Huang and Jingtao Bai and Michael Dudley and Bernhard M. Wagner and Robert F. Davis and Ying-xiong Zhu},
  journal={Physical review letters},
  year={2005},
  volume={95 8},
  pages={
          086101
        }
}
On-axis and vicinal GaN/AlN/6H-SiC structures grown under identical conditions have been studied by x-ray diffraction and transmission electron microscopy to demonstrate the distinctive features of vicinal surface epitaxy (VSE) of nitrides on SiC. In VSE, the epilayers are tilted from the substrate due to the out-of-plane lattice mismatch (Nagai tilts), and the in-plane mismatch strains are more relaxed. The majority of misfit dislocations (MDs) at the vicinal AlN/6H-SiC interface are found to… CONTINUE READING