Status of the Emerging InAlN / GaN Power HEMT Technology

@inproceedings{Medjdoub2010StatusOT,
  title={Status of the Emerging InAlN / GaN Power HEMT Technology},
  author={F. Medjdoub and J. F. Carlin and Christophe Gaqui{\`e}re and Nicolas Grandjean and Erhard Kohn},
  year={2010}
}
The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.