Statistics of competing post-breakdown failure modes in ultrathin MOS devices

@article{Su2006StatisticsOC,
  title={Statistics of competing post-breakdown failure modes in ultrathin MOS devices},
  author={Jordi Su{\~n}{\'e} and E. Y. Wu and Wing L. Lai},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={53},
  pages={224-234}
}
The statistical analysis of the time elapsed from first oxide breakdown to device failure (residual time) reveals that the distinction between hard breakdown (HBD) and soft breakdown (SBD) is meaningful for ultrathin oxides down to 1 nm. It also shows that the growth of the HBD current is progressive. Thus, the HBD prevalence ratio picture of post-breakdown reliability is generalized to include the HBD progressiveness. Moreover, it is shown that the statistics of residual time cannot be… 

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