Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations

Abstract

The McPherson model for the Si-O bond-breakage has been extended in a manner to capture the effect of O-Si-O angle variations on the breakage rate. Using a distribution function of the O-Si-O bond angle, a series of breakage rate probability densities has been calculated as a function of the applied electric field. Using such a distribution function we have… (More)

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