Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

@article{Kovac2008StatisticalSO,
  title={Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET},
  author={Urban Kovac and Dave Reid and Campbell Millar and Gareth Roy and Scott Roy and A. Asenov},
  journal={Microelectronics Reliability},
  year={2008},
  volume={48},
  pages={1572-1575}
}

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