Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness

@article{Ye2008StatisticalMA,
  title={Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness},
  author={Yun Ye and Frank Liu and Sani R. Nassif and Yu Cao},
  journal={2008 45th ACM/IEEE Design Automation Conference},
  year={2008},
  pages={900-905}
}
The threshold voltage (Vth) of a nanoscale transistor is severely affected by random dopant fluctuations and line-edge roughness. The analysis of these effects usually requires atomistic simulations that are too expensive computationally for statistical circuit design. In this work, we develop an efficient SPICE simulation method and statistical transistor model that accurately predict threshold variation as a function of dopant fluctuations and gate length change caused by sub-wavelength… CONTINUE READING
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