Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

@article{Ambrogio2014StatisticalFI,
  title={Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability},
  author={Stefano Ambrogio and Simone Balatti and Antonio Cubeta and Alessandro Calderoni and Nirmal Ramaswamy and Daniele Ielmini},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={2912-2919}
}
Resistive switching memory (RRAM) relies on the voltage-driven formation/disruption of a conductive filament (CF) across a thin insulating layer. Due to the 1-D structure of the CF and discrete nature of defects, the set and reset states of the memory device generally display statistical variability from cycle to cycle. For projecting cell downscaling and designing improved programming operations, the variability as a function of the operation parameters, such as the maximum current in the set… CONTINUE READING
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