## Single-Event Latchup Modeling Based on Coupled Physical and Electrical Transient Simulations in CMOS Technology

- Laurent Artola, Guillaume Hubert, Thomas Rousselin
- IEEE Transactions on Nuclear Science
- 2014

@article{StrzempaDepre1987StaticAT, title={Static and transient latchup simulation of VLSI-CMOS with an improved physical design model}, author={M. Strzempa-Depre and Jim Harter and Ch. Werner and H. Skapa and R. Kassing}, journal={IEEE Transactions on Electron Devices}, year={1987}, volume={34}, pages={1290-1296} }

- Published 1987 in IEEE Transactions on Electron Devices

We are presenting an improved latchup design model for static and transient latchup simulation of VLSI CMOS devices. The model is based on a decomposition of the CMOS structure into a network of analytically described current elements for both majority and minority carriers. Average doping densities and geometrical parameters are the physically based input data. For the modeling of the 2-D majority-carrier flow, transmission-line elements are introduced, especially in the inhomogeneously doped… CONTINUE READING