State of the art and the future of wide band-gap devices

@article{Kaminski2009StateOT,
  title={State of the art and the future of wide band-gap devices},
  author={N. Kaminski},
  journal={2009 13th European Conference on Power Electronics and Applications},
  year={2009},
  pages={1-9}
}
  • N. Kaminski
  • Published 2009 in
    2009 13th European Conference on Power…
Silicon as a semiconductor material is well established and first choice for the vast majority of devices. However, due to continuous device optimisation and improvements in the production process, the material properties are more and more the limiting factor. Workarounds like the super junction stretch the limits but usually at substantial cost. So a lot of effort is spent into the more straight forward approach, i.e. changing the semiconductor material. For power devices, wide band-gap… CONTINUE READING
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