State Asymmetry Driven State Remapping in Phase Change Memory

@article{Zhao2017StateAD,
  title={State Asymmetry Driven State Remapping in Phase Change Memory},
  author={Mengying Zhao and Yuan Xue and Jingtong Hu and Chengmo Yang and Tiantian Liu and Zhiping Jia and Chun Jason Xue},
  journal={IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems},
  year={2017},
  volume={36},
  pages={27-40}
}
Phase change memory (PCM) is one of the most promising candidates to replace DRAM as main memory in deep submicron regime. Regardless of single-level or multiple-level cells, the programming costs to each state exhibit significant asymmetries in latency, energy and endurance. In this paper, we exploit the potential of reducing programming costs in terms of latency, energy, and endurance for PCM through state remapping. First, quantitative programming models are constructed for cost assessments… CONTINUE READING

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