Stark effect, polarizability, and electroabsorption in silicon nanocrystals

  title={Stark effect, polarizability, and electroabsorption in silicon nanocrystals},
  author={Ceyhun Bulutay and Mustafa Kulakçı and Racsit Turan},
  journal={Physical Review B},
Demonstrating the quantum-confined Stark effect (QCSE) in silicon nanocrystals (NCs) embedded in oxide has been rather elusive, unlike the other materials. Here, the recent experimental data from ion-implanted Si NCs is unambiguously explained within the context of QCSE using an atomistic pseudopotential theory. This further reveals that the majority of the Stark shift comes from the valence states which undergo a level crossing that leads to a nonmonotonic radiative recombination behavior with… 
6 Citations

Figures from this paper

dc-switchable and single-nanocrystal-addressable coherent population transfer
Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic
Networks of silicon nanowires: a large-scale atomistic electronic structure analysis
Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential
Anisotropic spin–orbit stark effect in cubic semiconductors without an inversion center
The effect of external electric and magnetic fields on shallow donor levels in a semiconductor of the Td crystallographic class is analyzed. Application of an electric field eliminates the symmetry
Sources lasers déclenchées nanosecondes : Applications à la spectroscopie Raman cohérente sous champ électrique
Du fait de leur compacite, leur robustesse et leur faible cout, les microlasers impulsionnels nanosecondes constituent des sources particulierement attractives pour de nombreux systemes de detection
Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study
We present atomistic computations within an empirical pseudopotential framework for the electron $s$-shell ground state $g$-tensor of embedded InGaAs quantum dots (QDs). A large structural set


Quantum Dot Heterostructures
Fabrication Techniques for Quantum Dots. Self-Organization Concepts on Crystal Surfaces. Growth and Structural Characterization of Self-Organized Quantum Dots. Modeling of Ideal and Real Quantum
Classical Electrodynamics (2nd edn)
J D Jackson Chichester: J Wiley 1975 pp xxii + 848 price £10.75 The present edition of this now classic text offers substantial refinements and improvements over the first edition and includes some