Stacking transition in rhombohedral graphite

@article{Latychevskaia2018StackingTI,
  title={Stacking transition in rhombohedral graphite},
  author={T. Latychevskaia and Seok-Kyun Son and Yaping Yang and Dale Chancellor and Michael L. Brown and Servet Ozdemir and I. Madan and Gabriele Berruto and Fabrizio Carbone and Artem Mishchenko and Kostya S. Novoselov},
  journal={Frontiers of Physics},
  year={2018},
  volume={14},
  pages={1-7}
}
Few-layer graphene (FLG) has recently been intensively investigated for its variable electronic properties, which are defined by a local atomic arrangement. While the most natural arrangement of layers in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking, characterized by a relatively high-energy barrier, can also occur. When both types of stacking occur in one FLG device, the arrangement results in an in-plane heterostructure with a domain wall (DW). In this paper, we… 
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