Stacking, Strain, & Twist in 2D Materials Quantified by 3D Electron Diffraction

@article{Sung2019StackingS,
  title={Stacking, Strain, \& Twist in 2D Materials Quantified by 3D Electron Diffraction},
  author={S. Sung and Noah Schnitzer and L. Brown and Jiwoong Park and R. Hovden},
  journal={arXiv: Materials Science},
  year={2019}
}
The field of two-dimensional (2D) materials has expanded to multilayered systems where electronic, optical, and mechanical properties change-often dramatically-with stacking order, thickness, twist, and interlayer spacing [1-5]. For transition metal dichalcogenides (TMDs), bond coordination within a single van der Waals layer changes the out-of-plane symmetry that can cause metal-insulator transitions [1, 6] or emergent quantum behavior [7]. Discerning these structural order parameters is often… Expand
9 Citations

Figures from this paper

Interferometric 4D-STEM for Lattice Distortion and Stacking Sequence Measurements of Few-layer Two-dimensional Materials.
Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example,Expand
Unravelling stacking order in epitaxial bilayer MX2 using 4D-STEM with unsupervised learning.
TLDR
4D scanning transmission electron microscopy (4D-STEM) combined with multislice diffraction simulations to unravel stacking order in epitaxially grown bilayer MoS2 and machine learning based data segmentation is employed to obtain useful statistics on grain orientation of monolayer and stacking in bilayerMoS2. Expand
Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling
Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxyExpand
Photocatalytic activity of twist-angle stacked 2D TaS2
The low-cost, efficient photoelectrosensitive electrodes as an alternative to expensive and complex rigid systems are yet in demand for advanced photoresponsive technology. Here, the light-inducedExpand
Noncovalent Bonds through Sigma and Pi-Hole Located on the Same Molecule. Guiding Principles and Comparisons
TLDR
The underlying principles guiding the bonding in both sorts of interactions are discussed, and the trends that emerge from recent work offer a guide as to how one might design systems that allow multiple noncovalent bonds to occur simultaneously, or that prefer one bond type over another. Expand
Evolution of low-dimensional material-based field-effect transistors.
TLDR
A review of the developmental roadmap of FETs from conventional to miniaturized devices and their prospective applications in the field of optoelectronic devices will provide guidelines for low-dimensional material-based Fets with high performance and advancedApplications in the future. Expand

References

SHOWING 1-10 OF 44 REFERENCES
Twinning and twisting of tri- and bilayer graphene.
TLDR
Dark-field transmission electron microscopy is used for rapid and accurate determination of key structural parameters (twist angle, stacking order, and interlayer spacing) of few-layer CVD graphene and the long-range atomic registry for oriented bilayer and trilayer graphene is image, finding that it conforms exclusively to either Bernal or rhombohedral stacking. Expand
Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride.
TLDR
It is demonstrated, using a combination of analytical scanning transmission electron microscopy and density functional theory, that covalent interlayer bonds form spontaneously at the edges of a h-BN bilayer, resulting in subangstrom distortions of the edge atomic structure. Expand
Atomic lattice disorder in charge-density-wave phases of exfoliated dichalcogenides (1T-TaS2)
TLDR
The microscopic nature of PLDs at cryogenic and room temperature in thin flakes of 1T-TaS2 using atomic resolution scanning transmission electron microscopy is revealed and stacking transitions in the atomic lattice that occur via one-bond-length shifts are discovered. Expand
Atomic reconstruction at van der Waals interface in twisted bilayer graphene
Interfaces between crystalline materials have been an essential engineering platform for modern electronics. At the interfaces in two-dimensional (2D) van der Waals (vdW) heterostructures, theExpand
Stacking order dependent second harmonic generation and topological defects in h-BN bilayers.
TLDR
A strong correlation between the interlayer stacking structures and optical and topological properties in chemically grown h-BN bilayers is reported, measured mainly by using dark-field transmission electron microscopy (DF-TEM) and optical second harmonic generation (SHG) mapping. Expand
Density functional investigation of rhombohedral stacks of graphene: Topological surface states, nonlinear dielectric response, and bulk limit
A comprehensive density-functional theory (DFT)-based investigation of rhombohedral (ABC)-type graphene stacks with finite and infinite layer numbers and zero or finite static electric fields appliedExpand
Grains and grain boundaries in single-layer graphene atomic patchwork quilts
TLDR
This work determines the location and identity of every atom at a grain boundary and finds that different grains stitch together predominantly through pentagon–heptagon pairs, and reveals an unexpectedly small and intricate patchwork of grains connected by tilt boundaries. Expand
Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
TLDR
An investigation of the structural and transport properties of bilayer graphene as a function of the twist angle between the layers reveals atomic-scale reconstruction for twist angles smaller than a critical value. Expand
Stacking-dependent band gap and quantum transport in trilayer graphene
Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides anExpand
Diffraction from Disordered Surfaces: An Overview
Reflection high-energy electron diffraction (RHEED) is just one of several diffraction techniques (electron, atom, or x-ray) that have the capability for investigating the crystallography andExpand
...
1
2
3
4
5
...